- 您现在的位置：买卖IC网 > Sheet目录460 > IXTA160N10T7 (IXYS)MOSFET N-CH 100V 160A TO-263-7
Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA160N10T7
V DSS
I D25
R DS(on)
= 100 V
= 160 A
≤ 7.0 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (7-lead) (IXTA..7)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
100
100
V
V
V GSM
Transient
± 30
V
1
I D25
I LRMS
I DM
I AR
E AS
dv/dt
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
160
120
430
25
500
3
A
A
A
A
mJ
V/ns
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
T J ≤ 175 ° C, R G = 5 Ω
P D
T J
T JM
T stg
T L
T SOLD
Weight
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
430
-55 ... +175
175
-55 ... +175
300
260
3
W
° C
° C
° C
° C
° C
g
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Characteristic Values
Min. Typ. Max.
100 V
Applications
Automotive
- Motor Drives
- 42V Power Bus
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1 mA
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
T J = 150 ° C
2.5
4.5
± 200
5
250
V
nA
μ A
μ A
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
R DS(on)
V GS = 10 V, I D = 25 A, Notes 1
5.8
7.0
m Ω
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS99709 (11/06)
? 2006 IXYS CORPORATION All rights reserved
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTA160N10T
MOSFET N-CH 100V 160A TO-263
IXTA180N085T7
MOSFET N-CH 85V 180A TO-263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO-263
IXTA180N10T7
MOSFET N-CH 100V 180A TO-263-7
IXTA180N10T
MOSFET N-CH 100V 180A TO-263
IXTA182N055T7
MOSFET N-CH 55V 182A TO-263-7
IXTA182N055T
MOSFET N-CH 55V 182A TO-263
IXTA1R4N100P
MOSFET N-CH 1000V 1.4A TO-263
相关代理商/技术参数
IXTA16N50P
功能描述:MOSFET 16.0 Amps 500 V 0.4 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA170N075T2
功能描述:MOSFET 170 Amps 75V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA180N055T
功能描述:MOSFET 180 Amps 55V 0.004 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA180N085T
功能描述:MOSFET 180 Amps 85V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA180N085T7
功能描述:MOSFET 180 Amps 85V 5.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA180N10T
功能描述:MOSFET 180 Amps 100V 6.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA180N10T7
功能描述:MOSFET 180 Amps 100V 6.1 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA182N055T
功能描述:MOSFET 182 Amps 55V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube